PART |
Description |
Maker |
IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100 25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
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Integrated Device Technology, Inc. IDT
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IDT71V65602S-100BQI IDT71V65802S-100BQI IDT71V6580 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K × 3612K采样× 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 36 ZBT SRAM, 4.2 ns, PBGA165 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 512K X 18 ZBT SRAM, 4.2 ns, PBGA119 3.3V 256K X 36 ZBT Synchronous 2.5V I/O PipeLined SRAM 3.3V 512K x 18 ZBT Synchronous 2.5V I/O PipeLined SRAM
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Integrated Device Techn... Integrated Device Technology, Inc. IDT
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CY7C1360C-166AXC CY7C1360C-166BGC CY7C1360C-166BZI |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 QDR SRAM, 3 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3.5 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 3 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 QDR SRAM, 3 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 3.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA119
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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CY7C1356DV25-250BZC CY7C1356DV25-250BZI CY7C1356DV |
256K X 36 ZBT SRAM, 3.2 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
|
CYPRESS SEMICONDUCTOR CORP
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IDT71V802S133PFI IDT71V802S133BQI IDT71V67602S133P |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36,为512k × 18 3.3同步SRAM2.5VI / O的脉冲计数器输出流水线,单周期取 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 4.2 ns, PQFP100 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36,为512k × 18 3.3同步SRAM.5VI / O的脉冲计数器输出流水线,单周期取 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 3.8 ns, PQFP100
|
Integrated Device Technology, Inc.
|
CY7C1352-133AC CY7C1352-80AC |
256K x18 Pipelined SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 7 ns, PQFP100
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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CY7C1354CV25 CY7C1354CV25-166BGC CY7C1354CV25-166B |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL垄芒 Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
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IS61VPD25636A-200TQ2I IS61VPD51218A-200B2I |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 256K X 36 CACHE SRAM, 3.1 ns, PQFP100 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 512K X 18 CACHE SRAM, 3.1 ns, PBGA119
|
Integrated Silicon Solution, Inc.
|
GVT71512C18TA-4.4 GVT71512C18TA-6.7 GVT71512C18TA- |
256K x 36/512K x 18 Pipelined SRAM
|
Cypress Semiconductor Corp.
|
GVT71512C18 GVT71512C18B-4.4 GVT71512C18B-6 GVT715 |
256K x 36/512K x 18 Pipelined SRAM
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CYPRESS[Cypress Semiconductor]
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